UCC27712D

Texas Instruments

UCC27712D

Datasheet

模拟与电源

IC GATE DRVR HALF-BRIDGE 8SOIC

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号UCC27712
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, N-Channel, P-Channel MOSFET
制造商Texas Instruments
安装类型Surface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)16ns, 10ns

电气

Current - Peak Output (Source, Sink)1.8A, 2.8A
High Side Voltage - Max (Bootstrap)600 V
Logic Voltage - VIL, VIH0.8V, 2.4V
供电电压10V ~ 20V

机械

封装Tube
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC

环境

工作温度-40°C~125°C(TA)