L6399DTR

STMicroelectronics

L6399DTR

Datasheet

模拟与电源

IC GATE DRVR HALF-BRIDGE 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号L6399
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Gate TypeIGBT, N-Channel MOSFET
输入类型Non-Inverting
制造商STMicroelectronics
安装类型Surface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)75ns, 35ns

电气

Current - Peak Output (Source, Sink)290mA, 430mA
High Side Voltage - Max (Bootstrap)600 V
Logic Voltage - VIL, VIH1.1V, 1.9V
供电电压10V ~ 20V

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC

环境

工作温度-40°C ~ 125°C (TJ)