BS2101F-E2

Rohm Semiconductor

BS2101F-E2

Datasheet

模拟与电源

IC GATE DRV HI-SIDE/LO-SIDE 8SOP

已停产8-SOIC (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BS2101
Channel TypeSynchronous
Driven ConfigurationHigh-Side or Low-Side
Gate TypeIGBT, N-Channel MOSFET
输入类型Non-Inverting
制造商Rohm Semiconductor
安装类型Surface Mount
Number of Drivers2
Product StatusLast Time Buy
Rise / Fall Time (Typ)60ns, 20ns

电气

Current - Peak Output (Source, Sink)60mA, 130mA
High Side Voltage - Max (Bootstrap)600 V
Logic Voltage - VIL, VIH1V, 2.6V
供电电压10V ~ 18V

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.173", 4.40mm Width)
供应商器件封装8-SOP

环境

工作温度-40°C~125°C(TA)