BD2320EFJ-LAE2

Rohm Semiconductor

BD2320EFJ-LAE2

Datasheet

模拟与电源

100 V VB 3.5 A/4.5 A PEAK CURREN

在产8-SOIC (0.154", 3.90mm Width) Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Channel TypeIndependent
Driven ConfigurationHigh-Side and Low-Side
Gate TypeN-Channel MOSFET
输入类型Non-Inverting
制造商Rohm Semiconductor
安装类型Surface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)8ns, 6ns

电气

Current - Peak Output (Source, Sink)3.5A, 4.5A
High Side Voltage - Max (Bootstrap)100 V
Logic Voltage - VIL, VIH1.7V, 1.5V
供电电压7.5V ~ 14.5V

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
供应商器件封装8-HTSOP-J

环境

工作温度-40°C~125°C(TA)