ISL2111ARTZ

Renesas Electronics Corporation

ISL2111ARTZ

Datasheet

模拟与电源

IC GATE DRVR HALF-BRIDGE 10TDFN

在产10-WDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号ISL2111
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
输入类型Non-Inverting
制造商Renesas Electronics Corporation
安装类型Surface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)9ns, 7.5ns

电气

Current - Peak Output (Source, Sink)3A, 4A
High Side Voltage - Max (Bootstrap)114 V
Logic Voltage - VIL, VIH1.4V, 2.2V
供电电压8V ~ 14V

机械

封装Tray
Package / Case10-WDFN Exposed Pad
供应商器件封装10-TDFN (4x4)

环境

工作温度-40°C ~ 125°C (TJ)