R2J20657NP#G3

Renesas Electronics America Inc

R2J20657NP#G3

模拟与电源

HALF BRIDGE BASED MOSFET DRIVER

停产/老旧40-WFQFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Channel TypeIndependent
Driven ConfigurationHigh-Side or Low-Side
Gate TypeN-Channel MOSFET
输入类型TTL
制造商Renesas Electronics America Inc
安装类型Surface Mount
Number of Drivers1
Product StatusObsolete

电气

High Side Voltage - Max (Bootstrap)25 V
Logic Voltage - VIL, VIH0.8V, 2.6V
供电电压4.5V ~ 16V

机械

封装Bulk
Package / Case40-WFQFN Exposed Pad
供应商器件封装40-QFN (6x6)

环境

工作温度-40°C~150°C(TJ)