通用
| Driven Configuration | Half-Bridge |
|---|---|
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| 制造商 | Power Integrations |
| 安装类型 | Through Hole |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 160ns, 130ns |
| 系列 | SCALE™-1 |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Driven Configuration | Half-Bridge |
|---|---|
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| 制造商 | Power Integrations |
| 安装类型 | Through Hole |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 160ns, 130ns |
| 系列 | SCALE™-1 |
| Current - Peak Output (Source, Sink) | 18A, 18A |
|---|
| 封装 | Tray |
|---|---|
| Package / Case | 44-DIP Module, 42 Leads |
| 供应商器件封装 | Module |
| 工作温度 | -40°C~85°C |
|---|