来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | IRS23365 |
|---|---|
| Channel Type | 3-Phase |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| 输入类型 | Non-Inverting |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Number of Drivers | 6 |
| Product Status | Last Time Buy |
| Rise / Fall Time (Typ) | 125ns, 50ns |
| Current - Peak Output (Source, Sink) | 180mA, 380mA |
|---|---|
| High Side Voltage - Max (Bootstrap) | 600 V |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| 供电电压 | 10V ~ 20V |
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | 48-VFQFN Exposed Pad |
| 供应商器件封装 | 48-MLPQ (7x7) |
| 工作温度 | -40°C ~ 150°C (TJ) |
|---|