来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | IR2127 |
|---|---|
| Channel Type | Single |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| 输入类型 | Non-Inverting |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Number of Drivers | 1 |
| Product Status | Obsolete |
| Rise / Fall Time (Typ) | 80ns, 40ns |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
|---|---|
| High Side Voltage - Max (Bootstrap) | 600 V |
| Logic Voltage - VIL, VIH | 0.8V, 3V |
| 供电电压 | 12V ~ 20V |
| 封装 | Tube |
|---|---|
| Package / Case | 8-DIP (0.300", 7.62mm) |
| 供应商器件封装 | 8-PDIP |
| 工作温度 | -40°C ~ 150°C (TJ) |
|---|