来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | 2ED2106 |
|---|---|
| Channel Type | Independent |
| Driven Configuration | High-Side and Low-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| 输入类型 | CMOS, TTL |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 100ns, 35ns |
| Current - Peak Output (Source, Sink) | 290mA, 700mA |
|---|---|
| High Side Voltage - Max (Bootstrap) | 675 V |
| Logic Voltage - VIL, VIH | 1.1V, 1.7V |
| 供电电压 | 10V ~ 20V |
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| 供应商器件封装 | PG-DSO-8-69 |
| 工作温度 | -40°C~125°C(TA) |
|---|