WNSC2D301200W6Q

WeEn Semiconductors

WNSC2D301200W6Q

Datasheet

模拟与电源

WNSC2D301200W/TO247-2L/STANDARD

在产TO-247-2模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号WNSC2
Capacitance @ Vr, F1407pF @ 1V, 1MHz
制造商WeEn Semiconductors
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.6 V @ 30 A
Current - Average Rectified (Io)30A
Current - Reverse Leakage @ Vr150 µA @ 1.2 kV
速度No Recovery Time > 500mA (Io)

机械

封装Bulk
Package / CaseTO-247-2
供应商器件封装TO-247-2

环境

Operating Temperature - Junction-55°C ~ 175°C