WG50N65DHWQ

WeEn Semiconductors

WG50N65DHWQ

Datasheet

模拟与电源

IGBT TRENCH FD ST 650V 91A TO247

在产TO-247-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge160 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商WeEn Semiconductors
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)105 ns
Switching Energy1.7mJ (on), 600µJ (off)
Td (on/off) @ 25°C66ns/163ns
Test Condition400V, 50A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)91 A
Current - Collector Pulsed (Icm)200 A
Power - Max278 W

机械

封装Tube
Package / CaseTO-247-3
供应商器件封装TO-247-3

环境

工作温度-55°C~150°C(TJ)