NXPSC08650BJ

WeEn Semiconductors

NXPSC08650BJ

Datasheet

模拟与电源

DIODE SIL CARBIDE 650V 8A D2PAK

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号NXPSC
Capacitance @ Vr, F260pF @ 1V, 1MHz
制造商WeEn Semiconductors
安装类型Surface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 8 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr230 µA @ 650 V
速度No Recovery Time > 500mA (Io)

机械

封装Tape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装D2PAK

环境

Operating Temperature - Junction175°C (Max)