NXPSC06650D6J

WeEn Semiconductors

NXPSC06650D6J

Datasheet

模拟与电源

DIODE SIL CARBIDE 650V 6A DPAK

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号NXPSC
Capacitance @ Vr, F190pF @ 1V, 1MHz
制造商WeEn Semiconductors
安装类型Surface Mount
Product StatusObsolete
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 6 A
Current - Average Rectified (Io)6A
Current - Reverse Leakage @ Vr200 µA @ 650 V
速度No Recovery Time > 500mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装DPAK

环境

Operating Temperature - Junction175°C (Max)