BYV32E-100,127

WeEn Semiconductors

BYV32E-100,127

Datasheet

模拟与电源

DIODE ARRAY GP 100V 20A TO220AB

在产TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BYV32
Diode Configuration1 Pair Common Cathode
制造商WeEn Semiconductors
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)25 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.15 V @ 20 A
Current - Average Rectified (Io) (per Diode)20A
Current - Reverse Leakage @ Vr30 µA @ 100 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Tube
Package / CaseTO-220-3
供应商器件封装TO-220AB

环境

Operating Temperature - Junction150°C (Max)