BYV10MX-600PQ

WeEn Semiconductors

BYV10MX-600PQ

Datasheet

模拟与电源

DIODE GEN PURP 600V 10A TO220F

在产TO-220-2 Full Pack, Isolated Tab模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号BYV10
制造商WeEn Semiconductors
安装类型Through Hole
包装Tube
产品状态在产
Reverse Recovery Time (trr)35 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2 V @ 10 A
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 600 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

Package / CaseTO-220-2 Full Pack, Isolated Tab
供应商器件封装TO-220F

环境

Operating Temperature - Junction175°C