SUM110P08-11-E3

Name: SUM110P08-11-E3
Brand: Vishay Siliconix

模拟与电源

MOSFET P-CH 80V 110A TO263

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.1mOhm @ 20A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	11500 pF @ 40 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
系列	TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
最大功耗	13.6W (Ta), 375W (Tc)

工作温度	-55°C~175°C(TJ)