SUD50N10-18P-E3

Name: SUD50N10-18P-E3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 100V 8.2A/50A TO252

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	18.5mOhm @ 15A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 50 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
系列	TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	8.2A (Ta), 50A (Tc)
最大功耗	3W (Ta), 136.4W (Tc)

工作温度	-55°C~175°C(TJ)