SUD06N10-225L-E3

Name: SUD06N10-225L-E3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 100V 6.5A TO252

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	200mOhm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	240 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
系列	TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	6.5A (Tc)
最大功耗	1.25W (Ta), 20W (Tc)

工作温度	-55°C~175°C(TJ)