SQJA68EP-T1_BE3

Name: SQJA68EP-T1_BE3
Brand: Vishay Siliconix

模拟与电源

N-CHANNEL 100-V (D-S) 175C MOSFE

在产PowerPAK® SO-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	92mOhm @ 4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
最大功耗	45W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)