SQJ409EP-T2_GE3

Name: SQJ409EP-T2_GE3
Brand: Vishay Siliconix

模拟与电源

P-CHANNEL 40-V (D-S) 175C MOSFET

在产PowerPAK® SO-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7mOhm @ 10A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	11000 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
最大功耗	68W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)