SQD50N04-09H-GE3

Vishay Siliconix

SQD50N04-09H-GE3

Datasheet

模拟与电源

MOSFET N-CH 40V 50A TO252

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
基础料号SQD50N
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4240 pF @ 25 V
制造商Vishay Siliconix
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA

电气

漏源电压40 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)

机械

封装Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252AA