SQ2360EES-T1-GE3

Name: SQ2360EES-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 60V 4.4A TO236

停产/老旧TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	85mOhm @ 6A, 10V
基础料号	SQ2360
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	370 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)