SIZF916DT-T1-GE3

Name: SIZF916DT-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET 2N-CH 30V 23A 8PWRPAIR

在产8-PowerWDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
基础料号	SIZF916
配置	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1060pF @ 15V, 4320pF @ 15V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET® Gen IV
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4V @ 250µA, 2.2V @ 250µA

漏源电压	30V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 40A (Tc)
Power - Max	3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)

工作温度	-55°C ~ 150°C (TJ)