通用
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 16.4A, 10V |
|---|---|
| 基础料号 | SISH116 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | TrenchFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |