SIS626DN-T1-GE3

Name: SIS626DN-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 25V 16A PPAK1212-8

停产/老旧PowerPAK® 1212-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1925 pF @ 15 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.4V @ 250µA

漏源电压	25 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
最大功耗	52W (Tc)

工作温度	-55°C~150°C(TJ)