SIS4608DN-T1-GE3

Name: SIS4608DN-T1-GE3
Brand: Vishay Siliconix

模拟与电源

N-CHANNEL 60 V (D-S) MOSFET POWE

在产PowerPAK® 1212-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.8mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 30 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET® Gen IV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	12.4A (Ta), 35.7A (Tc)
最大功耗	3.3W (Ta), 27.1W (Tc)

工作温度	-55°C~150°C(TJ)