SIS176LDN-T1-GE3

Name: SIS176LDN-T1-GE3
Brand: Vishay Siliconix

模拟与电源

N-CHANNEL 70 V (D-S) MOSFET POWE

在产PowerPAK® 1212-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10.9mOhm @ 10A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1660 pF @ 35 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET® Gen IV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.6V @ 250µA

漏源电压	70 V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 4.5V
Current - Continuous Drain (Id) @ 25°C	12.9A (Ta), 42.3A (Tc)
最大功耗	3.6W (Ta), 39W (Tc)

工作温度	-55°C ~ 150°C (TJ)