SIRC16DP-T1-RE3

Name: SIRC16DP-T1-RE3
Brand: Vishay Siliconix

模拟与电源

N-CHANNEL 25-V (D-S) MOSFET W/SC

在产PowerPAK® SO-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	0.96mOhm @ 15A, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5150 pF @ 10 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.4V @ 250µA

漏源电压	25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	57A (Ta), 60A (Tc)
最大功耗	5W (Ta), 54.3W (Tc)

工作温度	-55°C~150°C(TJ)