通用
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 10A, 10V |
|---|---|
| 基础料号 | SIR681 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 40 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | TrenchFET® Gen IV |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |