SIR120DP-T1-RE3

Name: SIR120DP-T1-RE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 80V 24.7A/106A PPAK

在产PowerPAK® SO-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.55mOhm @ 15A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 40 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET® Gen IV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C	24.7A (Ta), 106A (Tc)
最大功耗	5.4W (Ta), 100W (Tc)

工作温度	-55°C~150°C(TJ)