SIHU6N65E-GE3

Name: SIHU6N65E-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 650V 7A IPAK

在产TO-251-3 Long Leads, IPak, TO-251AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 100 V
制造商	Vishay Siliconix
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
最大功耗	78W (Tc)

工作温度	-55°C~150°C(TJ)