SIHB22N60S-E3

Name: SIHB22N60S-E3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 600V 22A TO263

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	190mOhm @ 11A, 10V
基础料号	SIHB22
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2810 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
最大功耗	250W (Tc)