SIDR402DP-T1-GE3

Name: SIDR402DP-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 40V 64.6A/100A PPAK

在产PowerPAK® SO-8模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	0.88mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9100 pF @ 20 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET® Gen IV
技术	MOSFET (Metal Oxide)
Vgs (Max)	+20V, -16V
Vgs(th) (Max) @ Id	2.3V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	64.6A (Ta), 100A (Tc)
最大功耗	6.25W (Ta), 125W (Tc)

工作温度	-55°C~150°C(TJ)