来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | TrenchFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| 漏源电压 | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 6A (Tc) |
| 最大功耗 | 1.9W (Ta), 10W (Tc) |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | PowerPAK® SC-75-6 |
| 供应商器件封装 | PowerPAK® SC-75-6 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|