通用
| Rds On (Max) @ Id, Vgs | 64mOhm @ 3A, 10V |
|---|---|
| 基础料号 | SIA929 |
| 配置 | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 575pF @ 15V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Surface Mount |
| 包装 | Tape & Reel (TR) Cut Tape (CT) |
| 产品状态 | 在产 |
| 系列 | TrenchFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |