SI4752DY-T1-GE3

Name: SI4752DY-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 30V 25A 8SO

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5.5mOhm @ 10A, 10V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 15 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
系列	SkyFET®, TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
最大功耗	3W (Ta), 6.25W (Tc)

工作温度	-55°C ~ 150°C (TJ)