SI4620DY-T1-E3

Vishay Siliconix

SI4620DY-T1-E3

Datasheet

模拟与电源

MOSFET N-CH 30V 6A/7.5A 8SO

停产/老旧8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1040 pF @ 15 V
制造商Vishay Siliconix
安装类型Surface Mount
Product StatusObsolete
系列LITTLE FOOT®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 7.5A (Tc)
最大功耗2W (Ta), 3.1W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOIC

环境

工作温度-55°C ~ 150°C (TJ)