SI3475DV-T1-GE3

Name: SI3475DV-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET P-CH 200V 0.95A 6-TSOP

停产/老旧SOT-23-6 Thin, TSOT-23-6模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.61Ohm @ 900mA, 10V
基础料号	SI3475
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 50 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Obsolete
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	200 V
Current - Continuous Drain (Id) @ 25°C	950mA (Tc)