SI2387DS-T1-GE3

Name: SI2387DS-T1-GE3
Brand: Vishay Siliconix

模拟与电源

P-CHANNEL -80V SOT-23, 164 M @ 1

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	164mOhm @ 2.1A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	395 pF @ 40 V
制造商	Vishay Siliconix
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET® Gen IV
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta), 3A (Tc)
最大功耗	1.3W (Ta), 2.5W (Tc)

工作温度	-55°C ~ 150°C (TJ)