通用
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.8A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Through Hole |
| 包装 | Tube |
| 产品状态 | 在产 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |