IRLI640GPBF

Name: IRLI640GPBF
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 200V 9.9A TO220-3

在产TO-220-3 Full Pack, Isolated Tab模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	180mOhm @ 5.9A, 5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	200 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Current - Continuous Drain (Id) @ 25°C	9.9A (Tc)
最大功耗	40W (Tc)

工作温度	-55°C~150°C(TJ)