IRFU014

Vishay Siliconix

IRFU014

Datasheet

模拟与电源

MOSFET N-CH 60V 7.7A TO251AA

停产/老旧TO-251-3 Short Leads, IPAK, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 25 V
制造商Vishay Siliconix
安装类型Through Hole
包装Tube
产品状态停产/老旧
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
最大功耗2.5W (Ta), 25W (Tc)

机械

Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
供应商器件封装TO-251AA

环境

工作温度-55°C ~ 150°C (TJ)