IRFI734GPBF

Vishay Siliconix

IRFI734GPBF

模拟与电源

MOSFET N-CH 450V 3.4A TO220-3

停产/老旧TO-220-3 Full Pack, Isolated Tab模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 25 V
制造商Vishay Siliconix
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.4A (Tc)
最大功耗35W (Tc)

机械

封装Tube
Package / CaseTO-220-3 Full Pack, Isolated Tab
供应商器件封装TO-220-3

环境

工作温度-55°C~150°C(TJ)