通用
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 210mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Through Hole |
| 包装 | Tube |
| 产品状态 | 停产/老旧 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |