IRFD020PBF

Name: IRFD020PBF
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 50V 2.4A 4DIP

在产4-DIP (0.300", 7.62mm)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	100mOhm @ 1.4A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
制造商	Vishay Siliconix
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.4A (Tc)
最大功耗	1W (Tc)

工作温度	-55°C~150°C(TJ)