来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
|---|---|
| 基础料号 | BS250 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 15 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 系列 | TrenchFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| 漏源电压 | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
| 最大功耗 | 800mW (Ta) |
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| 供应商器件封装 | TO-92-18RM |
| 工作温度 | -55°C~150°C(TJ) |
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