2N7002E-T1-GE3

Name: 2N7002E-T1-GE3
Brand: Vishay Siliconix

模拟与电源

MOSFET N-CH 60V 240MA TO236

已停产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3Ohm @ 250mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	21 pF @ 5 V
制造商	Vishay Siliconix
安装类型	Surface Mount
包装	Tape & Reel (TR) Cut Tape (CT)
产品状态	Last Time Buy
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	240mA (Ta)
最大功耗	350mW (Ta)

Package / Case	TO-236-3, SC-59, SOT-23-3
供应商器件封装	TO-236

工作温度	-55°C ~ 150°C (TJ)