来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
|---|---|
| 基础料号 | 2N6660 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| 制造商 | Vishay Siliconix |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| 漏源电压 | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 990mA (Tc) |
| 最大功耗 | 725mW (Ta), 6.25W (Tc) |
| 封装 | Bulk |
|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| 供应商器件封装 | TO-205AD (TO-39) |
| 工作温度 | -55°C~150°C(TJ) |
|---|