通用
| 制造商 | Vishay General Semiconductor - Diodes Division |
|---|---|
| 安装类型 | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 113 ns |
| 系列 | FRED Pt® G5 |
| 技术 | Standard |
Vishay General Semiconductor - Diodes Division
VS-E5TH3012S2L-M3
Datasheet模拟与电源
DIODE GEN PURP 1.2KV 30A TO263AB
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 2.5 V @ 30 A |
| Current - Average Rectified (Io) | 30A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| 速度 | Fast Recovery =< 500ns, > 200mA (Io) |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| 供应商器件封装 | TO-263AB (D2PAK) |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|